IEEE TRANSACTIONS ON ELECTRON DEVICES
LIU K, CUI HW, ZHU L, LI X, LIU WH, HAN CY, WANG XL
IEEE TRANSACTIONS ON ELECTRON DEVICES
HUANG YX, TAO LQ, YU JB, LI XD, WANG ZP, ZHENG K, CHEN XP
IEEE TRANSACTIONS ON ELECTRON DEVICES
LIU JX, SHAO QY, RUI CK, SHAO C
IEEE TRANSACTIONS ON ELECTRON DEVICES
TIAN Y, WANG DY, LI YT, TIAN H, YANG Y, REN TL
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates
IEEE TRANSACTIONS ON ELECTRON DEVICES
ZHOU GN, WAN ZY, YANG GY, JIANG Y, SOKOLOVSKIJ R, YU HY, XIA GR
IEEE TRANSACTIONS ON ELECTRON DEVICES
XIE H, CHEN WC, ZHANG S, ZHU GD, KHALIQ A, HU J, YIN WY
IEEE TRANSACTIONS ON ELECTRON DEVICES
LIU YM, YANG KH, WANG XF, TIAN H, REN TL
IEEE TRANSACTIONS ON ELECTRON DEVICES
YANG JY, LU XZ, LI XP, BAO WM, CHEN RJ
IEEE TRANSACTIONS ON ELECTRON DEVICES
CHEN W, ZHOU YG, YU XZ, XIE ZL, ZHANG R, ZHENG YD
IEEE TRANSACTIONS ON ELECTRON DEVICES
ZHAO WS, CHENG ZH, WANG J, FU K, WANG DW, ZHAO P, WANG GF, DONG LX