国家/地区 France（6）
关键词 ELECTRONIC PROPERTI.（3） EPITAXIAL GRAPHENE（2） LOWENERGY ELECTRON .（2）
SPECTROSCOPY（2）
出版物 APPLIED PHYSICS LET.（2） NANO RESEARCH（2）
出版时间 2014（2）
机构 CNRS（6）
作者 SHUKLA A（6）

Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures

NANO RESEARCH

VELEZFORT E, PALLECCHI E, SILLY MG, BAHRI M, PATRIARCHE G, SHUKLA A, SIROTTI F, OUERGHI A

Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)

APPLIED PHYSICS LETTERS

VELEZFORT E, OUERGHI A, SILLY MG, EDDRIEF M, SHUKLA A, SIRTTI F, MARANGOLO M

Epitaxial Graphene on 4H-SiC(0001) Grown under Nitrogen Flux: Evidence of Low Nitrogen Doping and High Charge Transfer

ACS NANO

VELEZFORT E, MATHIEU C, PALLECCHI E, PIGNEUR M, SILLY MG, BELKHOU R, MARANGOLO M, SHUKLA A, SIROTTI F, OUERGHI A

Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers

PHYSICAL REVIEW B

OUERGHI A, RIDENE M, BALAN A, BELKHOU R, BARBIER A, GOGNEAU N, PORTAIL M, MICHON A, LATIL S, JEGOU P, SHUKLA A

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

APPLIED PHYSICS LETTERS

OUERGHI A, KAHOULI A, LUCOT D, PORTAIL M, TRAVERS L, GIERAK J, PENUELAS J, JEGOU P, SHUKLA A, CHASSAGNE T, ZIELINSKI M

Self-organized metal-semiconductor epitaxial graphene layer on off-axis 4H-SiC(0001)

NANO RESEARCH

PIERUCCI D, SEDIRI H, HAJLAOUI M, VELEZFORT E, DAPPE YJ, SILLY MG, BELKHOU R, SHUKLA A, SIROTTI F, GOGNEAU N, OUERGHI A