国家/地区 France（6）
关键词 SCANNING TUNNELLING.（2） SILICON（2）
出版物 APPLIED PHYSICS LETTERS（6）
出版时间 2010（6）
机构 CNRS（3）
作者 OUERGHI A（3） PORTAIL M（3） CHASSAGNE T（2） ZIELINSKI M（2）

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

APPLIED PHYSICS LETTERS

MOREAU E, GODEY S, FERRER FJ, VIGNAUD D, WALLART X, AVILA J, ASENSIO MC, BOURNEL F, GALLET JJ

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

APPLIED PHYSICS LETTERS

MICHON A, VEZIAN S, OUERGHI A, ZIELINSKI M, CHASSAGNE T, PORTAIL M

Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111)

APPLIED PHYSICS LETTERS

OUERGHI A, BELKHOU R, MARANGOLO M, SILLY MG, EL MOUSSAOUI S, EDDRIEF M, LARGEAU L, PORTAIL M, SIROTTI F

Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene?

APPLIED PHYSICS LETTERS

DLUBAK B, SENEOR P, ANANE A, BARRAUD C, DERANLOT C, DENEUVE D, SERVET B, MATTANA R, PETROFF F, FERT A

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

APPLIED PHYSICS LETTERS

OUERGHI A, KAHOULI A, LUCOT D, PORTAIL M, TRAVERS L, GIERAK J, PENUELAS J, JEGOU P, SHUKLA A, CHASSAGNE T, ZIELINSKI M

Graphene-like silicon nanoribbons on Ag(110): A possible formation of silicene

APPLIED PHYSICS LETTERS

AUFRAY B, KARA A, VIZZINI S, OUGHADDOU H, LEANDRI C, EALET B, LE LAY G