国家/地区 Germany（8）
关键词 MOBILITY（8）
出版物
出版时间 2018（2）
机构 AMO GMBH（3） RHEIN WESTFA.（2）
作者 LEMME MC（5） BAUS M（2） ECHTERMEYER .（2） GAHOI A（2）
KATARIA S（2） KURZ H（2）

Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene

ACS APPLIED ELECTRONIC MATERIALS

WITTMANN S, AUMER F, WITTMANN D, PINDL S, WAGNER S, GAHOI A, REATO E, BELETE M, KATARIA S, LEMME MC

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

IEEE TRANSACTIONS ON ELECTRON DEVICES

PANDEY H, SHAYGAN M, SAWALLICH S, KATARIA S, ZHENXING W, NOCULAK A, OTTO M, NAGEL M, NEGRA R, NEUMAIER D, LEMME MC

Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N=7 Armchair Graphene Nanoribbons

ACS APPLIED MATERIALS INTERFACES

PASSI V, GAHOI A, SENKOYSKIY BV, HABERER D, FISCHER FR, GRUNEIS A, LEMME MC

Enhancing the Electrochemical and Electronic Performance of CVD-Grown Graphene by Minimizing Trace Metal Impurities

CHEMELECTROCHEM

IOST RM, CRESPILHO FN, ZUCCARO L, YU HK, WODTKE AM, KERN K, BALASUBRAMANIAN K

Wet Chemical Synthesis of Graphene

ADVANCED MATERIALS

EIGLER S, ENZELBERGERHEIM M, GRIMM S, HOFMANN P, KROENER W, GEWORSKI A, DOTZER C, ROCKERT M, XIAO J, PAPP C, LYTKEN O, STEINRUCK HP, MULLER P, HIRSCH A

Mobility in graphene double gate field effect transistors

SOLIDSTATE ELECTRONICS

LEMME MC, ECHTERMEYER TJ, BAUS M, SZAFRANEK BN, BOLTEN J, SCHMIDT M, WAHLBRINK T, KURZ H

A graphene field-effect device

IEEE ELECTRON DEVICE LETTERS

LEMME MC, ECHTERMEYER TJ, BAUS M, KURZ H

A compact model of the backscattering coefficient and mobility of a graphene FET for SiO2 and h-BN substrates

JOURNAL OF COMPUTATIONAL ELECTRONICS

UPADHYAY AK, GUPTA D, MATHEW R, BEOHAR A