国家/地区 Germany（8）
关键词 MOLECULAR BEAM EPITAXY（8）
出版物 2D MATERIALS（3） JOURNAL OF CRYSTAL .（2）
出版时间
机构 PAUL DRUDE I.（2）
作者 LOPES JMJ（5） HANKE M（3） RIECHERT H（3） HEILMANN M（2）
JAHN U（2） OLIVEIRA MH（2） RAMSTEINER M（2） REUTER D（2）
SCHUMANN T（2） WOFFORD JM（2）

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures

ACS APPLIED MATERIALS INTERFACES

HEILMANN M, PRIKHODKO AS, HANKE M, SABELFELD A, BORGARDT NI, LOPES JMJ

Narrow photoluminescence and Raman peaks of epitaxial MoS2 on graphene/Ir(111)

2D MATERIALS

EHLEN N, HALL J, SENKOVSKIY BV, HELL M, LI J, HERMAN A, SMIRNOV D, FEDOROV A, VOROSHNIN VY, DI SANTO G, PETACCIA L, MICHELY T, GRUNEIS A

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

2D MATERIALS

HEILMANN M, BASHOUTI M, RIECHERT H, LOPES JMJ

Molecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions

NEW JOURNAL OF PHYSICS

WOFFORD JM, OLIVEIRA MH, SCHUMANN T, JENICHEN B, RAMSTEINER M, JAHN U, FOLSCH S, LOPES JMJ, RIECHERT H

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

SCHUMANN T, LOPES JMJ, WOFFORD JM, OLIVEIRA MH, DUBSLAFF M, HANKE M, JAHN U, GEELHAAR L, RIECHERT H

Large-area van der Waals epitaxy and magnetic characterization of Fe3GeTe2 films on graphene

2D MATERIALS

LOPES JMJ, CZUBAK D, ZALLO E, FIGUEROA AI, GUILLEMARD C, VALVIDARES M, RUBIOZUAZO J, LOPEZSANCHEZ J, VALENZUELA SO, HANKE M, RAMSTEINER M

Remote epitaxy of In(x)Ga1-As-x (001) on graphene covered GaAs (001) substrates

JOURNAL OF CRYSTAL GROWTH

HENKSMEIER T, SCHULZ JF, KLUTH E, FENEBERG M, GOLDHAHN R, SANCHEZ AM, VOIGT M, GRUNDMEIER G, REUTER D

Remote Epitaxy of Cubic Gallium Nitride on Graphene-Covered 3C-SiC Substrates by Plasma-Assisted Molecular Beam Epitaxy

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

LITTMANN M, REUTER D, AS DJ