国家/地区 Japan（9）
关键词
出版物 JOURNAL OF PHYSICAL.（2） RSC ADVANCES（2）
出版时间 2015（3） 2014（2）
机构 UNIV TOKYO（7）
作者 IMAMURA G（9）

Graphene Oxide as a Sensing Material for Gas Detection Based on Nanomechanical Sensors in the Static Mode

CHEMOSENSORS

IMAMURA G, MINAMI K, SHIBA K, MISTRY K, MUSSELMAN KP, YAVUZ M, YOSHIKAWA G, SAIKI K, OBATA S

Interlayer Interaction in the UV Irradiated Defect Formation of Graphene

JOURNAL OF PHYSICAL CHEMISTRY C

IMAMURA G, SAIKI K

Control of work function of graphene by plasma assisted nitrogen doping

APPLIED PHYSICS LETTERS

AKADA K, TERASAWA TO, IMAMURA G, OBATA S, SAIKI K

UV-irradiation induced defect formation on graphene on metals

CHEMICAL PHYSICS LETTERS

IMAMURA G, SAIKI K

Synthesis of Nitrogen-Doped Graphene on Pt(111) by Chemical Vapor Deposition

JOURNAL OF PHYSICAL CHEMISTRY C

IMAMURA G, SAIKI K

Growth of N-doped graphene from nitrogen containing aromatic compounds: the effect of precursors on the doped site

RSC ADVANCES

KATOH T, IMAMURA G, OBATA S, SAIKI K

Modification of Graphene/SiO2 Interface by UV-Irradiation: Effect on Electrical Characteristics

ACS APPLIED MATERIALS INTERFACES

IMAMURA G, SAIKI K

Effect of UV light-induced nitrogen doping on the field effect transistor characteristics of graphene

RSC ADVANCES

IMAMURA G, SAIKI K

The influence of source molecule structure on the low temperature growth of nitrogen-doped graphene

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

KATOH T, IMAMURA G, OBATA S, BHANUCHANDRA M, COPLEY G, YORIMITSU H, SAIKI K