国家/地区 Japan（7）
关键词 NANOMATERIAL（5） SOLID PHASE EPITAXY（3） GROWTH MODEL（2）
LOW DIMENSIONAL STR.（2）
出版物 JOURNAL OF CRYSTAL GROWTH（7）
出版时间 2020（2） 2021（2）
机构 MEIJO UNIV（4）
作者 MARUYAMA T（7）

X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer

JOURNAL OF CRYSTAL GROWTH

NARITSUKA S, YAMADA J, UEDA Y, NAKASHIMA A, KASHIO T, MARUYAMA T, FUJIKAWA S, SASAKI T, TAKAHASI M

Precipitation of multilayer graphene directly on gallium nitride template using Tungsten capping layer

JOURNAL OF CRYSTAL GROWTH

YAMADA J, UEDA Y, MARUYAMA T, NARITSUKA S

Selective growth of (001) GaAs using a patterned graphene mask

JOURNAL OF CRYSTAL GROWTH

HIROTA Y, SHIRAI Y, IHA H, KITO Y, SUZUKI M, KATO H, YAMAMOTO N, MARUYAMA T, NARITSUKA S

Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source

JOURNAL OF CRYSTAL GROWTH

MARUYAMA T, YAMASHITA Y, SAIDA T, TANAKA SI, NARITSUKA S

Low angle incidence microchannel epitaxy of GaN using graphene as a mask

JOURNAL OF CRYSTAL GROWTH

TAKENAKA S, KATO D, MARUYAMA T, NARITSUKA S

Direct precipitation of multilayer graphene on c-plane sapphire using a crystallized Ni catalyst

JOURNAL OF CRYSTAL GROWTH

NAKASHIMA A, MURAHASHI T, ACHIWA R, KASHIO T, MARUYAMA T, NARITSUKA S

Effect of crystallization of Ni catalyst on direct precipitation of multilayer graphene using W capping layer

JOURNAL OF CRYSTAL GROWTH

YAMADA J, UEDA Y, MARUYAMA T, FUJIKAWA S, SASAKI T, TAKAHASI M, NARITSUKA S