国家/地区 Japan（7）
关键词
出版物 JAPANESE JOURNAL OF.（5）
出版时间 2009（4） 2011（2）
机构 HOKKAIDO UNIV（7）
作者 OTSUJI T（7）

Gain enhancement in graphene terahertz amplifiers with resonant structures

JOURNAL OF APPLIED PHYSICS

TAKATSUKA Y, TAKAHAGI K, SANO E, RYZHII V, OTSUJI T

Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect

JAPANESE JOURNAL OF APPLIED PHYSICS

TAKATSUKA Y, SANO E, RYZHII V, OTSUJI T

Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors

APPLIED PHYSICS EXPRESS

SANO E, OTSUJI T

Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Performance Prediction of Graphene-Channel Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T