国家/地区 Japan（7）
关键词
出版物 JOURNAL OF PHYSICAL.（2）
出版时间 2014（2） 2015（2）
机构 UNIV TOKYO（7）
作者 IMAMURA G（7）

Interlayer Interaction in the UV Irradiated Defect Formation of Graphene

JOURNAL OF PHYSICAL CHEMISTRY C

IMAMURA G, SAIKI K

Control of work function of graphene by plasma assisted nitrogen doping

APPLIED PHYSICS LETTERS

AKADA K, TERASAWA TO, IMAMURA G, OBATA S, SAIKI K

UV-irradiation induced defect formation on graphene on metals

CHEMICAL PHYSICS LETTERS

IMAMURA G, SAIKI K

Synthesis of Nitrogen-Doped Graphene on Pt(111) by Chemical Vapor Deposition

JOURNAL OF PHYSICAL CHEMISTRY C

IMAMURA G, SAIKI K

Growth of N-doped graphene from nitrogen containing aromatic compounds: the effect of precursors on the doped site

RSC ADVANCES

KATOH T, IMAMURA G, OBATA S, SAIKI K

Modification of Graphene/SiO2 Interface by UV-Irradiation: Effect on Electrical Characteristics

ACS APPLIED MATERIALS INTERFACES

IMAMURA G, SAIKI K

The influence of source molecule structure on the low temperature growth of nitrogen-doped graphene

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

KATOH T, IMAMURA G, OBATA S, BHANUCHANDRA M, COPLEY G, YORIMITSU H, SAIKI K