国家/地区 Korea（5）
关键词 GRAPHENE（2）
出版物 ACS NANO（2） APPLIED PHYSICS LET.（2）
出版时间 2011（5）
机构 SAMSUNG ADV .（2）
作者 SHIN J（5）

Curvature-induced spin-orbit coupling and spin relaxation in a chemically clean single-layer graphene

PHYSICAL REVIEW B

JEONG JS, SHIN J, LEE HW

Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device

APPLIED PHYSICS LETTERS

KIM I, SIDDIK M, SHIN J, BIJU KP, JUNG S, HWANG H

Band Gap Opening by Two-Dimensional Manifestation of Peierls Instability in Graphene

ACS NANO

LEE SH, CHUNG HJ, HEO J, YANG H, SHIN J, CHUNG UI, SEO S

Passivation of Metal Surface States: Microscopic Origin for Uniform Mono layer Graphene by Low Temperature Chemical Vapor Deposition

ACS NANO

JEON I, YANG H, LEE SH, HEO J, SEO DH, SHIN J, CHUNG UI, KIM ZG, CHUNG HJ, SEO S

Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes

APPLIED PHYSICS LETTERS

LEE W, JO G, LEE S, PARK J, JO M, LEE J, JUNG S, KIM S, SHIN J, PARK S, LEE T, HWANG H