国家/地区 Korea（7）
关键词 DOPING（7）
出版物
出版时间 2016（7）
机构 CHONBUK NATL.（2） SUNGKYUNKWAN.（2）
作者 LEE S（2）

Control of device characteristics by passivation of graphene field effect transistors with polymers

CURRENT APPLIED PHYSICS

JANG G, YIM W, AHN YH, LEE S, PARK JY

Enrichment of Pyrrolic Nitrogen by Hole Defects in Nitrogen and Sulfur Co-Doped Graphene Hydrogel for Flexible Supercapacitors

CHEMSUSCHEM

TRAN NQ, KANG BK, WOO MH, YOON DH

Controlled doping of graphene using ZnO substrates

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

SI M, CHOI WJ, JEONG YJ, LEE YK, KIM JJ, LEE JO

Multilayer graphene/ITO transparent n-electrodes for high-efficiency III-nitride light-emitting diodes

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

KIM TK, OH SK, CHA YJ, LEE DK, HONG CH, CHOI HK, YOON YJ, KWAK JS

Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KIM H, DUGERJAV O, LKHAGVASUREN A, SEO JM

Tuning the Electrical Properties of Graphene via Nitrogen Plasma-Assisted Chemical Modification

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

JUNG MW, SONG W, JUNG DS, LEE SS, PARK CY, AN KS

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

ADVANCED MATERIALS

PARK HY, JUNG WS, KANG DH, JEON J, YOO G, PARK Y, LEE J, JANG YH, LEE J, PARK S, YU HY, SHIN B, LEE S, PARK JH