国家/地区 Korea（4）
关键词 FERROELECTRIC（4）
出版物 JOURNAL OF NANOSCIE.（2）
出版时间 2019（2）
机构 JEJU NATL UN.（2）
作者 KIM WY（2）

Feasibility of a Dual-Gate Graphene Transistor to Test Various Gate Dielectrics for Two-Dimensional Device Application

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

PARK N, SUH D, KANG H

Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer Process

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KHAN SA, JEONG HS, RAHMAN SA, BAE JH, KIM WY

Improved Retention Performance in Graphene-Ferroelectric Memory Device Through Mitigation of the Surface Roughness of the Ferroelectric Layer

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KIM WY

Novel multi-bit memory device using metal/PVDF-TrFE/graphene stack

MICROELECTRONIC ENGINEERING

HWANG HJ, YANG JH, KANG SC, CHO C, KANG CG, LEE YG, LEE BH