国家/地区 Korea（5）
关键词 GRAPHENE（2） GRAPHENE BARRISTOR（2）
出版物
出版时间 2018（5）
机构 GWANGJU INST SCI TECHNOL（5）
作者 HEO S（5）

Ternary Full Adder Using Multi-Threshold Voltage Graphene Barristors

IEEE ELECTRON DEVICE LETTERS

HEO S, KIM S, KIM K, LEE H, KIM SY, KIM YJ, KIM SM, LEE HI, LEE S, KIM KR, KANG S, LEE BH

Very-Low-Temperature Integrated Complementary Graphene-Barristor-Based Inverter for Thin-Film Transistor Applications

ANNALEN DER PHYSIK

HEO S, LEE HI, LEE H, KIM SM, KIM K, KIM YJ, KIM SY, KIM JH, YOON MH, LEE BH

Gate-Controlled Graphene-Silicon Schottky Junction Photodetector

SMALL

CHANG KE, YOO TJ, KIM C, KIM YJ, LEE SK, KIM SY, HEO S, KWON MG, LEE BH

High-pressure oxygen annealing of Al2O3 passivation layer for performance enhancement of graphene field-effect transistors

NANOTECHNOLOGY

KIM YJ, KIM SM, HEO S, LEE H, LEE HI, CHANG KE, LEE BH

Graphene-ZnO: N barristor on a polyethylene naphthalate substrate

AIP ADVANCES

HWANG HJ, HEO S, YOO WB, LEE BH