国家/地区 Korea（10）
关键词
出版物 APPLIED PHYSICS LETTERS（10）
出版时间 2011（3） 2014（3） 2013（2）
机构 GWANGJU INST.（10）
作者 LEE BH（10）

Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene

APPLIED PHYSICS LETTERS

KANG CG, LEE SK, YOO TJ, PARK W, JUNG U, AHN J, LEE BH

Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method

APPLIED PHYSICS LETTERS

JUNG U, LEE YG, KANG CG, LEE S, LEE BH

Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

APPLIED PHYSICS LETTERS

KANG JW, CHOI YS, KIM BH, KANG CG, LEE BH, TU CW, PARK SJ

Correlation between the hysteresis and the initial defect density of graphene

APPLIED PHYSICS LETTERS

CHO C, LEE YG, JUNG U, KANG CG, LIM S, HWANG HJ, CHOI H, LEE BH

Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors

APPLIED PHYSICS LETTERS

LEE YG, KIM YJ, KANG CG, CHO C, LEE S, HWANG HJ, JUNG U, LEE BH

Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices

APPLIED PHYSICS LETTERS

CHOE M, CHO CY, SHIM JP, PARK W, LIM SK, HONG WK, LEE BH, LEE DS, PARK SJ, LEE T

Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC

APPLIED PHYSICS LETTERS

HWANG HJ, CHO C, LIM SK, LEE SY, KANG CG, HWANG H, LEE BH

Enhanced characteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments

APPLIED PHYSICS LETTERS

LEE S, KANG SJ, JO G, CHOE M, PARK W, YOON J, KWON T, KAHNG YH, KIM DY, LEE BH, LEE T

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

APPLIED PHYSICS LETTERS

LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH

Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern

APPLIED PHYSICS LETTERS

CHO C, LEE SK, NOH JW, PARK W, LEE S, LEE YG, HWANG HJ, KANG CG, HAM MH, LEE BH