国家/地区 Malaysia（7）
关键词 FERMI LEVEL（2）
出版物 JOURNAL OF COMPUTAT.（3）
出版时间 2012（2） 2013（2） 2014（2）
机构 UNIV TEKNOL .（4） UNIV SAINS M.（2）
作者 GHADIRY MH（7）

Carrier scattering and impact ionization in bilayer graphene

JOURNAL OF COMPUTATIONAL ELECTRONICS

SAEIDMANESH M, GHADIRY MH, KHALEDIAN M, KIANI MJ, ISMAIL R

Quantum confinement effect on trilayer graphene nanoribbon carrier concentration

JOURNAL OF EXPERIMENTAL NANOSCIENCE

RAHMANI M, ISMAIL R, AHMADI MT, GHADIRY MH

Gas Concentration Effect on Channel Capacitance in Graphene Based Sensors

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

AKBARI E, AHMADI MT, YUSOF R, GHADIRY MH, SAEIDMANESH M

Performance of Bilayer Graphene Nanoribbon Schottky Diode in Comparison with Conventional Diodes

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

RAHMANI M, AHMADI MT, ISMAIL R, GHADIRY MH

The Effect of Applied Voltage on the Carrier Effective Mass in ABA Trilayer Graphene Nanoribbon

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

RAHMANI M, AHMADI MT, GHADIRY MH, SAMADI J, ANWAR S, ISMAIL R

Modelling and Simulation of Saturation Region in Double Gate Graphene Nanoribbon Transistors

SEMICONDUCTORS

GHADIRY MH, NADI M, RAHMANI M, AHMADI MT, BIN ABD MANAF A

A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors

MICROELECTRONICS RELIABILITY

GHADIRY MH, NADI M, AHMADI MT, ABD MANAF A