国家/地区 Netherlands（18）
关键词 GRAPHENE（7） HEXAGONAL BORON NIT.（2）
出版物 NANO LETTERS（5） APPLIED PHYSICS LET.（3） PHYSICAL REVIEW B（3）
出版时间 2012（5） 2007（3） 2008（2） 2014（2）
机构 DELFT UNIV TECHNOL（18）
作者 VANDERSYPEN LMK（18）

Electron Beam Induced Deposition on graphene on silicon oxide and hexagonal boron nitride: A comparison of substrates

MICROELECTRONIC ENGINEERING

HARI S, GOOSSENS AM, VANDERSYPEN LMK, HAGEN CW

Ballistic transport in graphene grown by chemical vapor deposition

APPLIED PHYSICS LETTERS

CALADO VE, ZHU SE, GOSWAMI S, XU Q, WATANABE K, TANIGUCHI T, JANSSEN GCAM, VANDERSYPEN LMK

Understanding the catalyst-free transformation of amorphous carbon into graphene by current-induced annealing

SCIENTIFIC REPORTS

BARREIRO A, BORRNERT F, AVDOSHENKO SM, RELLINGHAUS B, CUNIBERTI G, RUMMELI MH, VANDERSYPEN LMK

Quantum Dots at Room Temperature Carved out from Few-Layer Graphene

NANO LETTERS

BARREIRO A, VAN DER ZANT HSJ, VANDERSYPEN LMK

Formation and control of wrinkles in graphene by the wedging transfer method

APPLIED PHYSICS LETTERS

CALADO VE, SCHNEIDER GF, THEULINGS AMMG, DEKKER C, VANDERSYPEN LMK

Gate-Defined Confinement in Bilayer Graphene-Hexagonal Boron Nitride Hybrid Devices

NANO LETTERS

GOOSSENS AM, DRIESSEN SCM, BAART TA, WATANABE K, TANIGUCHI T, VANDERSYPEN LMK

Zero-bias conductance peak and Josephson effect in graphene-NbTiN junctions

PHYSICAL REVIEW B

POPINCIUC M, CALADO VE, LIU XL, AKHMEROV AR, KLAPWIJK TM, VANDERSYPEN LMK

Mechanical cleaning of graphene

APPLIED PHYSICS LETTERS

GOOSSENS AM, CALADO VE, BARREIRO A, WATANABE K, TANIGUCHI T, VANDERSYPEN LMK

Room-Temperature Gating of Molecular Junctions Using Few-Layer Graphene Nanogap Electrodes

NANO LETTERS

PRINS F, BARREIRO A, RUITENBERG JW, SELDENTHUIS JS, ALIAGAALCALDE N, VANDERSYPEN LMK, VAN DER ZANT HSJ

Gate-defined graphene double quantum dot and excited state spectroscopy

NANO LETTERS

LIU XL, HUG D, VANDERSYPEN LMK