国家/地区 Poland（38）
关键词 GRAPHENE（8） RAMAN SPECTROSCOPY（4） DEFECT（3）
出版物 APPLIED PHYSICS LET.（6） JOURNAL OF APPLIED .（6） PHYSICAL REVIEW B（5）
CARBON（4） ACTA PHYSICA POLONI.（3） SURFACE COATINGS T.（2）
出版时间 2015（5） 2016（5） 2012（4） 2013（4） 2019（4） 2009（3） 2010（3） 2020（3） 2011（2） 2014（2） 2022（2）
机构 UNIV WARSAW（12） INST ELECT M.（11） UNIV LODZ（9） POLISH ACAD .（3）
作者 BARANOWSKI JM（38）

Interactions of Ti and its oxides with selected surfaces: Si(100), HOPG(0001) and graphene/4H-SiC(0001)

SURFACE COATINGS TECHNOLOGY

PABIANEK K, KRUKOWSKI P, POLANSKI K, CIEPIELEWSKI P, BARANOWSKI JM, ROGALA M, KOZLOWSKI W, BUSIAKIEWICZ A

Improvement of graphene scratch resistance by ion beam bombardment

NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION BBEAM INTERACTIONS WITH MATERIALS ATOMS

GAWLIK G, PIATKOWSKA A, CIEPIELEWSKI P, BARANOWSKI JM, JAGIELSKI J

Work Function Tunability of Graphene with Thermally Evaporated Rhenium Heptoxide for Transparent Electrode Applications

ADVANCED ENGINEERING MATERIALS

KRUKOWSKI P, KOWALCZYK DA, PISKORSKI M, DABROWSKI P, ROGALA M, CABAN P, CIEPIELEWSKI P, JUNG J, BARANOWSKI JM, ULANSKI J, KLUSEK Z

Growth of highly oriented MoS2 via an intercalation process in the graphene/SiC(0001) system

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

MICHALOWSKI PP, KNYPS P, CIEPIELEWSKI P, CABAN PA, DUMISZEWSKA E, KOWALSKI G, TOKARCZYK M, BARANOWSKI JM

Early oxidation stages of germanium substrate in the graphene/Ge(001) system

CARBON

DABROWSKI P, ROGALA M, PASTERNAK I, KRUKOWSKI P, BARANOWSKI JM, STRUPINSKI W, LUTSYK I, KOWALCZYK DA, PAWLOWSKI S, KLUSEK Z

STS observations of deep defects within laser-illuminated graphene/MOVPE-h-BN heterostructures

APPLIED PHYSICS LETTERS

WLASNY I, PAKULA K, STEPNIEWSKI R, STRUPINSKI W, PASTERNAK I, BARANOWSKI JM, WYSMOLEK A

Study of Implantation Defects in CVD Graphene by Optical and Electrical Methods

APPLIED SCIENCESBASEL

GAWLIK G, CIEPIELEWSKI P, BARANOWSKI JM

Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

JOURNAL OF APPLIED PHYSICS

URBAN JM, DABROWSKI P, BINDER J, KOPCIUSZYNSKI M, WYSMOLEK A, KLUSEK Z, JALOCHOWSKI M, STRUPINSKI W, BARANOWSKI JM

Structural defects in epitaxial graphene layers synthesized on C-terminated 4H-SiC (000(1)over-bar) surface-Transmission electron microscopy and density functional theory studies

JOURNAL OF APPLIED PHYSICS

BORYSIUK J, SOLTYS J, PIECHOTA J, KRUKOWSKI S, BARANOWSKI JM, STEPNIEWSKI R

Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

APPLIED PHYSICS LETTERS

TOKARCZYK M, KOWALSKI G, MOZDZONEK M, BORYSIUK J, STEPNIEWSKI R, STRUPINSKI W, CIEPIELEWSKI P, BARANOWSKI JM