国家/地区 Usa（9）
关键词 GRAPHENE（3） MULTILAYER（2）
出版物 NANO LETTERS（5） PHYSICAL REVIEW B（2）
出版时间 2009（9）
机构 IBM CORP（7）
作者 AVOURIS P（9）

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

NANO LETTERS

FARMER DB, CHIU HY, LIN YM, JENKINS KA, XIA FN, AVOURIS P

Ultrafast graphene photodetector

NATURE NANOTECHNOLOGY

XIA FN, MUELLER T, LIN YM, VALDESGARCIA A, AVOURIS P

Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene

PHYSICAL REVIEW B

ZHU WJ, PEREBEINOS V, FREITAG M, AVOURIS P

Role of contacts in graphene transistors: A scanning photocurrent study

PHYSICAL REVIEW B

MUELLER T, XIA F, FREITAG M, TSANG J, AVOURIS P

Behavior of a chemically doped graphene junction

APPLIED PHYSICS LETTERS

FARMER DB, LIN YM, AFZALIARDAKANI A, AVOURIS P

Energy Dissipation in Graphene Field-Effect Transistors

NANO LETTERS

FREITAG M, STEINER M, MARTIN Y, PEREBEINOS V, CHEN ZH, TSANG JC, AVOURIS P

Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor

NANO LETTERS

XIA FN, MUELLER T, GOLIZADEHMOJARAD R, FREITAG M, LIN YM, TSANG J, PEREBEINOS V, AVOURIS P

Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices

NANO LETTERS

FARMER DB, GOLIZADEHMOJARAD R, PEREBEINOS V, LIN YM, TULEVSKI GS, TSANG JC, AVOURIS P

Operation of Graphene Transistors at Gigahertz Frequencies

NANO LETTERS

LIN YM, JENKINS KA, VALDESGARCIA A, SMALL JP, FARMER DB, AVOURIS P