国家/地区 Usa（5）
关键词
出版物
出版时间 2012（3）
机构 CARNEGIE MELLON UNIV（5）
作者 HE GW（5）

Formation of graphene atop a Si adlayer on the C-face of SiC

PHYSICAL REVIEW MATERIALS

LI J, WANG QX, HE GW, WIDOM M, NEMEC L, BLUM V, KIM M, RINKE P, FEENSTRA RM

Formation of a Buffer Layer for Graphene on C-Face SiC{0001}

JOURNAL OF ELECTRONIC MATERIALS

HE GW, SRIVASTAVA N, FEENSTRA RM

Formation of graphene on SiC(000(1)over-bar) surfaces in disilane and neon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HE GW, SRIVASTAVA N, FEENSTRA RM

Graphene formed on SiC under various environments: comparison of Si-face and C-face

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SRIVASTAVA N, HE GW, LUXMI, MENDE PC, FEENSTRA RM, SUN YG

Interface structure of graphene on SiC(000(1)over-bar)

PHYSICAL REVIEW B

SRIVASTAVA N, HE GW, LUXMI, FEENSTRA RM