国家/地区 Usa（5）
关键词
出版物 APPLIED PHYSICS LET.（3）
出版时间
机构 UNIV CALIF BERKELEY（5）
作者 SALAHUDDIN S（5）

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

SMITH S, LLINAS JP, BOKOR J, SALAHUDDIN S

Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

GANAPATHI K, YOON Y, LUNDSTROM M, SALAHUDDIN S

Dissipative transport in rough edge graphene nanoribbon tunnel transistors

APPLIED PHYSICS LETTERS

YOON Y, SALAHUDDIN S

Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green's function method with real space approach

APPLIED PHYSICS LETTERS

YOON Y, NIKONOV DE, SALAHUDDIN S

Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors

APPLIED PHYSICS LETTERS

YOON Y, SALAHUDDIN S