国家/地区 Usa（7）
关键词 GRAPHENE（5） ALUMINA（2） ATOMIC LAYER DEPOSI.（2）
ELECTRON MOBILITY（2） FIELD EFFECT TRANSI.（2） HIGHK DIELECTRIC TH.（2）
INSULATED GATE FIEL.（2） PERMITTIVITY（2）
出版物 APPLIED PHYSICS LETTERS（7）
出版时间 2010（3） 2012（2）
机构 UNIV TEXAS D.（4） UNIV TEXAS A.（3）
作者 COLOMBO L（7）

Low-kappa organic layer as a top gate dielectric for graphene field effect transistors

APPLIED PHYSICS LETTERS

MORDI G, JANDHYALA S, FLORESCA C, MCDONNELL S, KIM MJ, WALLACE RM, COLOMBO L, KIM J

Scaling of Al2O3 dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

FALLAHAZAD B, LEE K, LIAN G, KIM S, CORBET CM, FERRER DA, COLOMBO L, TUTUC E

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

APPLIED PHYSICS LETTERS

PIRKLE A, CHAN J, VENUGOPAL A, HINOJOS D, MAGNUSON CW, MCDONNELL S, COLOMBO L, VOGEL EM, RUOFF RS, WALLACE RM

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

APPLIED PHYSICS LETTERS

FALLAHAZAD B, KIM S, COLOMBO L, TUTUC E

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

APPLIED PHYSICS LETTERS

LEE B, MORDI G, KIM MJ, CHABAL YJ, VOGEL EM, WALLACE RM, CHO KJ, COLOMBO L, KIM J

Contact resistance in few and multilayer graphene devices

APPLIED PHYSICS LETTERS

VENUGOPAL A, COLOMBO L, VOGEL EM

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

APPLIED PHYSICS LETTERS

KIM S, NAH J, JO I, SHAHRJERDI D, COLOMBO L, YAO Z, TUTUC E, BANERJEE SK