国家/地区 Usa（12）
关键词 FIELD EFFECT TRANSISTOR（12）
出版物 APPLIED PHYSICS LETTERS（12）
出版时间 2010（8） 2009（2） 2012（2）
机构 PURDUE UNIV（2） UNIV TEXAS A.（2）
作者 COLOMBO L（2） ZHU J（2）

Detection of sulfur dioxide gas with graphene field effect transistor

APPLIED PHYSICS LETTERS

REN YJ, ZHU CF, CAI WW, LI HF, JI HX, KHOLMANOV I, WU YP, PINER RD, RUOFF RS

Scaling of Al2O3 dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

FALLAHAZAD B, LEE K, LIAN G, KIM S, CORBET CM, FERRER DA, COLOMBO L, TUTUC E

Aperiodic conductivity oscillations in quasiballistic graphene heterojunctions

APPLIED PHYSICS LETTERS

BEGLIARBEKOV M, SUL O, AI N, YANG EH, STRAUF S

Local strain in tunneling transistors based on graphene nanoribbons

APPLIED PHYSICS LETTERS

LU Y, GUO J

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O-3

APPLIED PHYSICS LETTERS

HONG X, HOFFMAN J, POSADAS A, ZOU K, AHN CH, ZHU J

Graphene field-effect transistors with self-aligned gates

APPLIED PHYSICS LETTERS

FARMER DB, LIN YM, AVOURIS P

Ambipolar graphene field effect transistors by local metal side gates

APPLIED PHYSICS LETTERS

TIAN JF, JAUREGUI LA, LOPEZ G, CAO H, CHEN YP

The effect of traps on the performance of graphene field-effect transistors

APPLIED PHYSICS LETTERS

ZHU J, JHAVERI R, WOO JCS

Contact resistance in few and multilayer graphene devices

APPLIED PHYSICS LETTERS

VENUGOPAL A, COLOMBO L, VOGEL EM

Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors

APPLIED PHYSICS LETTERS

YOON Y, SALAHUDDIN S