国家/地区 Usa（8） China（3） Japan（3） Korea（2）
关键词 FIELD EFFECT TRANSISTOR（18）
出版物 APPLIED PHYSICS LET.（15） NANO LETTERS（3）
出版时间 2010（18）
机构 SUNGKYUNKWAN.（2）
作者 AHN JH（2） HONG BH（2） JANG H（2） ZHU J（2）

Controllable N-Doping of Graphene

NANO LETTERS

GUO BD, LIU QA, CHEN ED, ZHU HW, FANG LA, GONG JR

Aperiodic conductivity oscillations in quasiballistic graphene heterojunctions

APPLIED PHYSICS LETTERS

BEGLIARBEKOV M, SUL O, AI N, YANG EH, STRAUF S

High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics

NANO LETTERS

KIM BJ, JANG H, LEE SK, HONG BH, AHN JH, CHO JH

Local strain in tunneling transistors based on graphene nanoribbons

APPLIED PHYSICS LETTERS

LU Y, GUO J

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O-3

APPLIED PHYSICS LETTERS

HONG X, HOFFMAN J, POSADAS A, ZOU K, AHN CH, ZHU J

Graphene field-effect transistors with self-aligned gates

APPLIED PHYSICS LETTERS

FARMER DB, LIN YM, AVOURIS P

Ambipolar graphene field effect transistors by local metal side gates

APPLIED PHYSICS LETTERS

TIAN JF, JAUREGUI LA, LOPEZ G, CAO H, CHEN YP

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

APPLIED PHYSICS LETTERS

KANG JH, HE Y, ZHANG JY, YU XX, GUAN XM, YU ZP

Charge-density depinning at metal contacts of graphene field-effect transistors

APPLIED PHYSICS LETTERS

NOUCHI R, TANIGAKI K

The effect of traps on the performance of graphene field-effect transistors

APPLIED PHYSICS LETTERS

ZHU J, JHAVERI R, WOO JCS