国家/地区 Singapore（2）
关键词 NANOELECTRONIC（5）
出版物 APPLIED PHYSICS LETTERS（5）
出版时间 2010（5）
机构
作者

Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate

APPLIED PHYSICS LETTERS

BRANT JC, LEON J, BARBOSA TC, ARAUJO END, ARCHANJO BS, PLENTZ F, ALVES ES

Valley filter in strain engineered graphene

APPLIED PHYSICS LETTERS

FUJITA T, JALIL MBA, TAN SG

Model of tunneling transistors based on graphene on SiC

APPLIED PHYSICS LETTERS

MICHETTI P, CHELI M, IANNACCONE G

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

APPLIED PHYSICS LETTERS

WANG HM, ZHENG Z, WANG YY, QIU JJ, GUO ZB, SHEN ZX, YU T

Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors

APPLIED PHYSICS LETTERS

YOON Y, SALAHUDDIN S