国家/地区 Usa（6）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（3）
出版时间 2011（6）
机构
作者 TEDESCO JL（6）

Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology

IEEE ELECTRON DEVICE LETTERS

LIN YM, FARMER DB, JENKINS KA, WU YQ, TEDESCO JL, MYERSWARD RL, EDDY CR, GASKILL DK, DIMITRAKOPOULOS C, AVOURIS P

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

APPLIED PHYSICS LETTERS

PULS CP, STALEY NE, MOON JS, ROBINSON JA, CAMPBELL PM, TEDESCO JL, MYERSWARD RL, EDDY CR, GASKILL DK, LIU Y

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

JOURNAL OF APPLIED PHYSICS

GARCES NY, WHEELER VD, HITE JK, JERNIGAN GG, TEDESCO JL, NEPAL N, EDDY CR, GASKILL DK

Kelvin probe microscopy and electronic transport in graphene on SiC(0001) in the minimum conductivity regime

APPLIED PHYSICS LETTERS

CURTIN AE, FUHRER MS, TEDESCO JL, MYERSWARD RL, EDDY CR, GASKILL DK

Epitaxial Graphene Nucleation on C-Face Silicon Carbide

NANO LETTERS

HITE JK, TWIGG ME, TEDESCO JL, FRIEDMAN AL, MYERSWARD RL, EDDY CR, GASKILL DK

Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

APPLIED PHYSICS LETTERS

HOFMANN T, BOOSALIS A, KUHNE P, HERZINGER CM, WOOLLAM JA, GASKILL DK, TEDESCO JL, SCHUBERT M