国家/地区 Usa（6）
关键词
出版物 APPLIED PHYSICS LET.（2） JOURNAL OF APPLIED .（2）
出版时间 2012（8）
机构 USN（3） GEORGIA INST.（2）
作者 EDDY CR（8）

Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene

MRS BULLETIN

NYAKITI LO, WHEELER VD, GARCES NY, MYERSWARD RL, EDDY CR, GASKILL DK

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

IEEE ELECTRON DEVICE LETTERS

ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, CALDWELL JD, BEZARES FJ, JERNIGAN GG, TADJER MJ, IMHOFF EA, KOEHLER AD, GASKILL DK, EDDY CR, KUB FJ

Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

APPLIED PHYSICS LETTERS

KIM BJ, LEE C, MASTRO MA, HITE JK, EDDY CR, REN F, PEARTON SJ, KIM J

Charge transfer equilibria in ambient-exposed epitaxial graphene on (000(1)over-bar) 6 H-SiC (vol 111, 113706, 2012)

JOURNAL OF APPLIED PHYSICS

SIDOROV AN, GASKILL K, NARDELLI MB, TEDESCO JL, MYERSWARD RL, EDDY CR, JAYASEKERA T, KIM KW, JAYASINGHA R, SHEREHIY A, STALLARD R, SUMANASEKERA GU

Charge transfer equilibria in ambient-exposed epitaxial graphene on (000(1)over-bar) 6 H-SiC

JOURNAL OF APPLIED PHYSICS

SIDOROV AN, GASKILL K, NARDELLI MB, TEDESCO JL, MYERSWARD RL, EDDY CR, JAYASEKERA T, KIM KW, JAYASINGHA R, SHEREHIY A, STALLARD R, SUMANASEKERA GU

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

APPLIED PHYSICS LETTERS

TADJER MJ, ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, GASKILL DK, EDDY CR, KUB FJ, CALLE F

Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING HL, SEABAUGH A, JENA D

Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas

NANO LETTERS

NYAKITI LO, MYERSWARD RL, WHEELER VD, IMHOFF EA, BEZARES FJ, CHUN H, CALDWELL JD, FRIEDMAN AL, MATIS BR, BALDWIN JW, CAMPBELL PM, CULBERTSON JC, EDDY CR, JERNIGAN GG, GASKILL DK