国家/地区 Usa（9） Korea（6） China（3） Singapore（2）
Taiwan（2）
关键词 FIELDEFFECT TRANSISTOR（22）
出版物 ACS NANO（5） ADVANCED MATERIALS（5） SMALL（3）
出版时间 2012（22）
机构 CHINESE ACAD.（2） NANYANG TECH.（2）
作者 BOL AA（2） HAN SJ（2） KIM KS（2） LEE S（2）
LEE WH（2） PARK J（2）

Electronic Transport and Raman Scattering in Size-Controlled Nanoperforated Graphene

ACS NANO

KIM M, SAFRON NS, HAN E, ARNOLD MS, GOPALAN P

Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

ADVANCED MATERIALS

SOME S, KIM J, LEE K, KULKARNI A, YOON Y, LEE S, KIM T, LEE H

High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

ADVANCED MATERIALS

TRUNG TQ, TIEN NT, KIM D, JUNG JH, YOON OJ, LEE NE

Fabrication of Graphene Nanomesh by Using an Anodic Aluminum Oxide Membrane as a Template

ADVANCED MATERIALS

ZENG ZY, HUANG X, YIN ZY, LI H, CHEN Y, LI H, ZHANG Q, MA J, BOEY F, ZHANG H

Graphene-based ambipolar electronics for radio frequency applications

CHINESE SCIENCE BULLETIN

WANG ZX, ZHANG ZY, PENG LM

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S

Patterning graphene nanostripes in substrate-supported functionalized graphene: A promising route to integrated, robust, and superior transistors

FRONTIERS OF PHYSICS

HUANG LF, ZENG Z

High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics

ACS NANO

LU CC, LIN YC, YEH CH, HUANG JC, CHIU PW

Logic Inverter Implemented with CVD-Assembled Graphene FET on Hexagonal Boron Nitride

IEEE TRANSACTIONS ON NANOTECHNOLOGY

KIM E, JAIN N, XU Y, YU B

Review on Recent Progress in Nitrogen-Doped Graphene: Synthesis, Characterization, and Its Potential Applications

ACS CATALYSIS

WANG HB, MAIYALAGAN T, WANG X