国家/地区 Korea（6）
关键词 FIELDEFFECT TRANSISTOR（6）
出版物 ADVANCED MATERIALS（3）
出版时间 2012（6）
机构
作者 LEE S（2）

Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

ADVANCED MATERIALS

SOME S, KIM J, LEE K, KULKARNI A, YOON Y, LEE S, KIM T, LEE H

High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

ADVANCED MATERIALS

TRUNG TQ, TIEN NT, KIM D, JUNG JH, YOON OJ, LEE NE

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S

Flexible FET-Type VEGF Aptasensor Based on Nitrogen-Doped Graphene Converted from Conducting Polymer

ACS NANO

KWON OS, PARK SJ, HONG JY, HAN AR, LEE JS, LEE JS, OH JH, JANG J

Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

ADVANCED MATERIALS

PARK J, JO SB, YU YJ, KIM Y, YANG W, LEE WH, KIM HH, HONG BH, KIM P, CHO K, KIM KS

Electrical transport properties of graphene-covered-Cu wires grown by chemical vapor deposition

CURRENT APPLIED PHYSICS

YOO K, SEO EK, KIM SJ, KIM W, PARK MG, YU H, HWANG C