国家/地区 Japan（3）
关键词
出版物
出版时间 2014（4）
机构 TOHOKU UNIV（2）
作者 NAGASHIO K（4）

Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy

APPLIED PHYSICS EXPRESS

FUKIDOME H, NAGASHIO K, NAGAMURA N, TASHIMA K, FUNAKUBO K, HORIBA K, SUEMITSU M, TORIUMI A, OSHIMA M

The crystal orientation relation and macroscopic surface roughness in heteroepitaxial graphene grown on Cu/mica

NANOTECHNOLOGY

QI JL, NAGASHIO K, NISHIMURA T, TORIUMI A

Large Fermi energy modulation in graphene transistors with high-pressure O-2-annealed Y2O3 topgate insulators

APPLIED PHYSICS LETTERS

KANAYAMA K, NAGASHIO K, NISHIMURA T, TORIUMI A

Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact

SCIENTIFIC REPORTS

FUKIDOME H, KOTSUGI M, NAGASHIO K, SATO R, OHKOCHI T, ITOH T, TORIUMI A, SUEMITSU M, KINOSHITA T