国家/地区 China（5） India（2） Iran（2）
关键词 LOGIC GATE（14）
出版物 IEEE ELECTRON DEVIC.（3） IEEE SENSORS JOURNA.（3） IEEE TRANSACTIONS O.（3）
出版时间 2021（14）
机构
作者

Fabrication Strategies and Measurement Techniques for Performance Improvement of Graphene/Graphene Derivative Based FET Gas Sensor Devices: A Review

IEEE SENSORS JOURNAL

BHATTACHARYYA P

Mobility Degradation and Series Resistance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JEPPSON K, ASAD M, STAKE J

Reduced Drift of CMOS ISFET pH Sensors Using Graphene Sheets

IEEE SENSORS JOURNAL

PANTELI C, GEORGIOU P, FOBELETS K

Phase Shift Induced by Gate-Controlled Quantum Capacitance in Graphene

IEEE ELECTRON DEVICE LETTERS

LI JQ, MAO XR, GU XW, XIE S, GENG ZX, CHEN HD

Photon-triggered self-powered all electronics with graphene-silicon hybrid device

NANO ENERGY

KUMAR M, LIM J, KANG H, KIM S, SEO H

Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, GAO XD, LIU QB, ZHANG YH, YU GH, HAN TT, LIU C, FENG ZH, CAI SJ

Ion Gel Coated Graphene Field Effect Transistor for Humidity Sensing Applications

IEEE SENSORS JOURNAL

LIU DS, KHAN U, LI PH, KHAN MA, WU J, WANG ZM

Steep-Slope Transistors Based on Chiral Graphene Nanoribbons With Intrinsic Cold Source

IEEE TRANSACTIONS ON ELECTRON DEVICES

YE SZ, WANG ZF, WANG H, HUANG QJ, HE J, CHANG S

Complementary Two-Dimensional (2-D) FET Technology With MoS2/hBN/Graphene Stack

IEEE ELECTRON DEVICE LETTERS

ESTRADA CJ, MA ZC, CHAN MS

Bias-Dependent Intrinsic RF Thermal Noise Modeling and Characterization of Single-Layer Graphene FETs

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

MAVREDAKI N, PACHECOSANCHEZ A, SAKALAS P, WEI W, PALLECCHR E, HAPPY H, JIMENEZ D