国家/地区 Japan（5）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（5）
出版时间 2009（3） 2011（2）
机构 HOKKAIDO UNIV（5）
作者 OTSUJI T（5）

Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect

JAPANESE JOURNAL OF APPLIED PHYSICS

TAKATSUKA Y, SANO E, RYZHII V, OTSUJI T

Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Performance Prediction of Graphene-Channel Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T