国家/地区 China（7）
关键词
出版物 ADVANCED MATERIALS（2） IEEE ELECTRON DEVIC.（2）
出版时间 2016（4）
机构 NANJING UNIV（7）
作者 WAN Q（7）

Freestanding Multi-Gate Amorphous Oxide-Based TFTs on Graphene Oxide Enhanced Electrolyte Membranes

IEEE ELECTRON DEVICE LETTERS

YANG XQ, LIU ZH, LUO J, ZHANG CX, HE YL, SHI Y, WAN Q

Flexible IZO Homojunction TFTs With Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

IEEE ELECTRON DEVICE LETTERS

NIE S, YANG Y, HE YL, SHI Y, WAN Q

A light-stimulated synaptic device based on graphene hybrid phototransistor

2D MATERIALS

QIN SC, WANG FQ, LIU YJ, WAN Q, WANG XR, XU YB, SHI Y, WANG XM, ZHANG R

Long-Term Synaptic Plasticity Emulated in Modified Graphene Oxide Electrolyte Gated IZO-Based Thin-Film Transistors

ACS APPLIED MATERIALS INTERFACES

YANG Y, WEN J, GUO LQ, WAN X, DU PF, FENG P, SHI Y, WAN Q

Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices

SCIENTIFIC REPORTS

FENG P, DU PF, WAN CJ, SHI Y, WAN Q

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates

ADVANCED MATERIALS

WAN CJ, LIU YH, FENG P, WANG W, ZHU LQ, LIU ZP, SHI Y, WAN Q

Proton-Conducting Graphene Oxide-Coupled Neuron Transistors for Brain-Inspired Cognitive Systems

ADVANCED MATERIALS

WAN CJ, ZHU LQ, LIU YH, FENG P, LIU ZP, CAO HL, XIAO P, SHI Y, WAN Q