国家/地区 China（6）
关键词 FIELDEFFECT TRANSISTOR（6）
出版物
出版时间 2013（2）
机构 PEKING UNIV（6）
作者 PENG LM（3） ZHANG ZY（3） WANG ZX（2）

Transconductance Amplification in Dirac-Source Field-Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

ADVANCED ELECTRONIC MATERIALS

XU L, QIU CG, PENG LM, ZHANG ZY

Stability of radio-frequency graphene field-effect transistors in ambient

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG ZD, ZHANG QP, WEI ZJ, PENG P, TIAN ZZ, REN LM, ZHANG X, HUANG R, WEN JC, FU YY

Substrate Engineering by Hexagonal Boron Nitride/SiO2 for Hysteresis-Free Graphene FETs and Large-Scale Graphene p-n Junctions

CHEMISTRYAN ASIAN JOURNAL

XU H, WU JX, CHEN YB, ZHANG HL, ZHANG J

Ultraviolet Irradiation-Controlled Memory Effect in Graphene Field-Effect Transistors

SMALL

MENG J, WU HC, CHEN JJ, LIN F, BIE YQ, SHVETS IV, YU DP, LIAO ZM

Graphene-based ambipolar electronics for radio frequency applications

CHINESE SCIENCE BULLETIN

WANG ZX, ZHANG ZY, PENG LM

Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dirac Point Voltage

ACS NANO

XU HL, ZHANG ZY, XU HT, WANG ZX, WANG S, PENG LM