国家/地区 Usa（6）
关键词 EPITAXIAL GRAPHENE（4） GRAPHENE（3） ATOMIC LAYER DEPOSI.（2）
FIELD EFFECT TRANSI.（2） GATE DIELECTRIC（2）
出版物 ACS NANO（2） NANO LETTERS（2）
出版时间 2011（3）
机构 PENN STATE UNIV（6）
作者 TRUMBULL KA（6）

Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

HOLLANDER MJ, AGRAWAL A, BRESNEHAN MS, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, DATTA S, ROBINSON JA

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation

NANO LETTERS

ROBINSON JA, HOLLANDER M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW

Enhanced Transport and Transistor Performance with Oxide Seeded High-kappa Gate Dielectrics on Wafer-Scale Epitaxial Graphene

NANO LETTERS

HOLLANDER MJ, LABELLA M, HUGHES ZR, ZHU M, TRUMBULL KA, CAVALERO R, SNYDER DW, WANG XJ, HWANG E, DATTA S, ROBINSON JA

Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)

APPLIED PHYSICS LETTERS

ROBINSON JA, TRUMBULL KA, LABELLA M, CAVALERO R, HOLLANDER MJ, ZHU M, WETHERINGTON MT, FANTON M, SNYDER DW

Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties

ACS NANO

ROBINSON JA, LABELLA M, TRUMBULL KA, WENG XJ, CAVELERO R, DANIELS T, HUGHES Z, HOLLANDER M, FANTON M, SNYDER D