国家/地区 Korea（4）
关键词
出版物 ADVANCED MATERIALS（4）
出版时间 2016（3）
机构 SUNGKYUNKWAN UNIV（4）
作者 LEE S（4）

Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

ADVANCED MATERIALS

SOME S, KIM J, LEE K, KULKARNI A, YOON Y, LEE S, KIM T, LEE H

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene

ADVANCED MATERIALS

NGUYEN VL, PERELLO DJ, LEE S, NAI CT, SHIN BG, KIM JG, PARK HY, JEONG HY, ZHAO J, VU QA, LEE SH, LOH KP, JEONG SY, LEE YH

Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

ADVANCED MATERIALS

SHIM J, KIM HS, SHIM YS, KANG DH, PARK HY, LEE J, JEON J, JUNG SJ, SONG YJ, JUNG WS, LEE J, PARK S, KIM J, LEE S, KIM YH, PARK JH

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

ADVANCED MATERIALS

PARK HY, JUNG WS, KANG DH, JEON J, YOO G, PARK Y, LEE J, JANG YH, LEE J, PARK S, YU HY, SHIN B, LEE S, PARK JH