国家/地区 Japan（11）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（11）
出版时间 2011（5） 2010（4） 2012（2）
机构 TOHOKU UNIV（11）
作者 HANDA H（11）

Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

IDE T, KAWAI Y, HANDA H, FUKIDOME H, KOTSUGI M, OHKOCHI T, ENTA Y, KINOSHITA T, YOSHIGOE A, TERAOKA Y, SUEMITSU M

Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment

JAPANESE JOURNAL OF APPLIED PHYSICS

SANBONSUGE S, ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M

Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process

JAPANESE JOURNAL OF APPLIED PHYSICS

ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

JAPANESE JOURNAL OF APPLIED PHYSICS

EL MOUTAOUAKIL A, KANG HC, HANDA H, FUKIDOME H, SUEMITSU T, SANO E, SUEMITSU M, OTSUJI T

Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations

JAPANESE JOURNAL OF APPLIED PHYSICS

HANDA H, TAKAHASHI R, ABE S, IMAIZUMI K, SAITO E, JUNG MH, ITO S, FUKIDOME H, SUEMITSU M

Epitaxial Growth Processes of Graphene on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

FUKIDOME H, MIYAMOTO Y, HANDA H, SAITO E, SUEMITSU M

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates (vol 49, 04DF17, 2010)

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T