国家/地区 France（9）
关键词
出版物 APPLIED PHYSICS LETTERS（9）
出版时间 2013（3） 2008（2） 2014（2）
机构 UNIV PARIS 11（9）
作者 DOLLFUS P（6） BOURNEL A（4） NGUYEN VH（4） SAINTMARTIN .（3）
QUERLIOZ D（2）

Enhanced thermoelectric figure of merit in vertical graphene junctions

APPLIED PHYSICS LETTERS

NGUYEN VH, NGUYEN MC, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap

APPLIED PHYSICS LETTERS

TRAN VT, SAINTMARTIN J, DOLLFUS P

GaN nanowire ultraviolet photodetector with a graphene transparent contact

APPLIED PHYSICS LETTERS

BABICHEV AV, ZHANG H, LAVENUS P, JULIEN FH, EGOROV AY, LIN YT, TU LW, TCHERNYCHEVA M

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

APPLIED PHYSICS LETTERS

BERRADA S, NGUYEN VH, QUERLIOZ D, STMARTIN J, ALARCON A, CHASSAT C, BOURNEL A, DOLLFUS P

Manipulation at a distance: Atomic-scale observation of ballistic electron transport in single layer graphene

APPLIED PHYSICS LETTERS

YANG H, MAYNE AJ, CEJAS C, DUJARDIN G, KUK Y

Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions

APPLIED PHYSICS LETTERS

NGUYEN VH, MAZZAMUTO F, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Resonant tunneling and negative transconductance in single barrier bilayer graphene structure

APPLIED PHYSICS LETTERS

NGUYEN VH, BOURNEL A, NGUYEN VL, DOLLFUS P

Comment on "Negative differential conductance of electrons in graphene barrier" [Appl. Phys. Lett. 90, 143111 (2007)]

APPLIED PHYSICS LETTERS

DO VN

Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

APPLIED PHYSICS LETTERS

QUERLIOZ D, APERTET Y, VALENTIN A, HUET K, BOURNEL A, GALDINRETAILLEAU S, DOLLFUS P