国家/地区 Usa（8）
关键词
出版物 APPLIED PHYSICS LET.（4）
出版时间 2014（3） 2012（2） 2013（2）
机构 UNIV TEXAS AUSTIN（8）
作者 CHOWDHURY SF（8）

Toward 300 mm Wafer-Scalable High-Performance Polycrystalline Chemical Vapor Deposited Graphene Transistors

ACS NANO

RAHIMI S, TAO L, CHOWDHURY SF, PARK S, JOUVRAY A, BUTTRESS S, RUPESINGHE N, TEO K, AKINWANDE D

Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

APPLIED PHYSICS LETTERS

CHOWDHURY SF, SONDE S, RAHIMI S, TAO L, BANERJEE S, AKINWANDE D

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

APPLIED PHYSICS LETTERS

RAMON ME, MOVVA HCP, CHOWDHURY SF, PARRISH KN, RAI A, MAGNUSON CW, RUOFF RS, AKINWANDE D, BANERJEE SK

High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

IEEE ELECTRON DEVICE LETTERS

LEE J, HA TJ, PARRISH KN, CHOWDHURY SF, TAO L, DODABALAPUR A, AKINWANDE D

Transformation of the Electrical Characteristics of Graphene Field-Effect Transistors with Fluoropolymer

ACS APPLIED MATERIALS INTERFACES

HA TJ, LEE J, CHOWDHURY SF, AKINWANDE D, ROSSKY PJ, DODABALAPUR A

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

APPLIED PHYSICS LETTERS

MOVVA HCP, RAMON ME, CORBET CM, SONDE S, CHOWDHURY SF, CARPENTER G, TUTUC E, BANERJEEL SK

Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency

IEEE TRANSACTIONS ON NANOTECHNOLOGY

RAMON ME, PARRISH KN, CHOWDHURY SF, MAGNUSON CW, MOVVA HCP, RUOFF RS, BANERJEE SK, AKINWANDE D

Enhanced sensitivity of graphene ammonia gas sensors using molecular doping

APPLIED PHYSICS LETTERS

ZANJANI SMM, SADEGHI MM, HOLT M, CHOWDHURY SF, TAO L, AKINWANDE D