国家/地区 Usa（11）
关键词 GRAPHENE（3） RF ANALOG DEVICE（2） TRANSIT FREQUENCY（2）
出版物 APPLIED PHYSICS LET.（7）
出版时间 2011（3） 2012（3） 2013（3）
机构 UNIV TEXAS AUSTIN（11）
作者 PARRISH KN（11）

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

APPLIED PHYSICS LETTERS

RAMON ME, MOVVA HCP, CHOWDHURY SF, PARRISH KN, RAI A, MAGNUSON CW, RUOFF RS, AKINWANDE D, BANERJEE SK

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

ACS NANO

LEE J, HA TJ, LI HF, PARRISH KN, HOLT M, DODABALAPUR A, RUOFF RS, AKINWANDE D

"Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers" (vol 99, 223512, 2011)

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

IEEE ELECTRON DEVICE LETTERS

LEE J, HA TJ, PARRISH KN, CHOWDHURY SF, TAO L, DODABALAPUR A, AKINWANDE D

Multi-finger flexible graphene field effect transistors with high bendability

APPLIED PHYSICS LETTERS

LEE J, TAO L, PARRISH KN, HAO YF, RUOFF RS, AKINWANDE D

Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency

IEEE TRANSACTIONS ON NANOTECHNOLOGY

RAMON ME, PARRISH KN, CHOWDHURY SF, MAGNUSON CW, MOVVA HCP, RUOFF RS, BANERJEE SK, AKINWANDE D

An exactly solvable model for the graphene transistor in the quantum capacitance limit

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Impact of contact resistance on the transconductance and linearity of graphene transistors (vol 98, 183505, 2011)

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Impact of contact resistance on the transconductance and linearity of graphene transistors

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D