国家/地区 Usa（21）
关键词 GRAPHENE（5） CVD GRAPHENE（3） COPPER（2）
出版物 ACS NANO（5） APPLIED PHYSICS LET.（5）
出版时间 2012（4） 2014（4） 2015（4） 2016（4） 2013（3） 2017（2）
机构 UNIV TEXAS AUSTIN（21）
作者 TAO L（21）

Toward 300 mm Wafer-Scalable High-Performance Polycrystalline Chemical Vapor Deposited Graphene Transistors

ACS NANO

RAHIMI S, TAO L, CHOWDHURY SF, PARK S, JOUVRAY A, BUTTRESS S, RUPESINGHE N, TEO K, AKINWANDE D

Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

APPLIED PHYSICS LETTERS

CHOWDHURY SF, SONDE S, RAHIMI S, TAO L, BANERJEE S, AKINWANDE D

A blister test for interfacial adhesion of large-scale transferred graphene

CARBON

CAO Z, WANG P, GAO W, TAO L, SUK JW, RUOFF RS, AKINWANDE D, HUANG R, LIECHTI KM

Direct Delamination of Graphene for High-Performance Plastic Electronics

SMALL

WANG XH, TAO L, HAO YF, LIU ZH, CHOU H, KHOLMANOV I, CHEN SS, TAN C, JAYANT N, YU QK, AKINWANDE D, RUOFF RS

Inductively heated synthesized graphene with record transistor mobility on oxidized silicon substrates at room temperature

APPLIED PHYSICS LETTERS

TAO L, LEE J, LI HF, PINER RD, RUOFF RS, AKINWANDE D

Graphene Synthesis via Magnetic Inductive Heating of Copper Substrates

ACS NANO

PINER R, LI HF, KONG XH, TAO L, KHOLMANOV IN, JI HX, LEE WH, SUK JW, YE J, HAO YF, CHEN SS, MAGNUSON CW, ISMACH AF, AKINWANDE D, RUOFF RS

High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

IEEE ELECTRON DEVICE LETTERS

LEE J, HA TJ, PARRISH KN, CHOWDHURY SF, TAO L, DODABALAPUR A, AKINWANDE D

Multi-finger flexible graphene field effect transistors with high bendability

APPLIED PHYSICS LETTERS

LEE J, TAO L, PARRISH KN, HAO YF, RUOFF RS, AKINWANDE D

Uniform Wafer-Scale Chemical Vapor Deposition of Graphene on Evaporated Cu (111) Film with Quality Comparable to Exfoliated Monolayer

JOURNAL OF PHYSICAL CHEMISTRY C

TAO L, LEE J, HOLT M, CHOU H, MCDONNELL SJ, FERRER DA, BABENCO MG, WALLACE RM, BANERJEE SK, RUOFF RS, AKINWANDE D

Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics

APPLIED PHYSICS LETTERS

LEE J, TAO L, HAO YF, RUOFF RS, AKINWANDE D