国家/地区 Usa（7）
关键词 GRAPHENE（4）
出版物 APPLIED PHYSICS LET.（4）
出版时间 2010（2） 2011（2）
机构 UNIV TEXAS DALLAS（7）
作者 VOGEL EM（7）

Nonlinear Switching With Ultralow Reset Power in Graphene-Insulator-Graphene Forming-Free Resistive Memories

IEEE ELECTRON DEVICE LETTERS

CHAKRABARTI B, ROY T, VOGEL EM

Reducing Extrinsic Performance-Limiting Factors in Graphene Grown by Chemical Vapor Deposition

ACS NANO

CHAN J, VENUGOPAL A, PIRKLE A, MCDONNELL S, HINOJOS D, MAGNUSON CW, RUOFF RS, COLOMBO L, WALLACE RM, VOGEL EM

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

APPLIED PHYSICS LETTERS

PIRKLE A, CHAN J, VENUGOPAL A, HINOJOS D, MAGNUSON CW, MCDONNELL S, COLOMBO L, VOGEL EM, RUOFF RS, WALLACE RM

Effective mobility of single-layer graphene transistors as a function of channel dimensions

JOURNAL OF APPLIED PHYSICS

VENUGOPAL A, CHAN J, LI XS, MAGNUSON CW, KIRK WP, COLOMBO L, RUOFF RS, VOGEL EM

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

APPLIED PHYSICS LETTERS

LEE B, MORDI G, KIM MJ, CHABAL YJ, VOGEL EM, WALLACE RM, CHO KJ, COLOMBO L, KIM J

Contact resistance in few and multilayer graphene devices

APPLIED PHYSICS LETTERS

VENUGOPAL A, COLOMBO L, VOGEL EM

Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

APPLIED PHYSICS LETTERS

LEE BK, PARK SY, KIM HC, CHO K, VOGEL EM, KIM MJ, WALLACE RM, KIM JY