国家/地区 Switzerland（11）
关键词 GRAPHENE（3） QUANTUM DOT（3） NANOSTRUCTURED MATE.（2）
出版物 APPLIED PHYSICS LETTERS（12）
出版时间 2012（4） 2008（2） 2009（2） 2015（2）
机构 ETH（8） SWISS FED IN.（2）
作者 IHN T（12）

Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

APPLIED PHYSICS LETTERS

FU W, EL ABBASSI M, HASLER T, JUNG M, STEINACHER M, CALAME M, SCHONENBERGER C, PUEBLAHELLMANN G, HELLMULLER S, IHN T, WALLRAFF A

Reactive-ion-etched graphene nanoribbons on a hexagonal boron nitride substrate

APPLIED PHYSICS LETTERS

BISCHOFF D, KRAHENMANN T, DROSCHER S, GRUNER MA, BARRAUD C, IHN T, ENSSLIN K

Scanning gate microscopy on a graphene nanoribbon

APPLIED PHYSICS LETTERS

PASCHER N, BISCHOFF D, IHN T, ENSSLIN K

High-frequency gate manipulation of a bilayer graphene quantum dot

APPLIED PHYSICS LETTERS

DROSCHER S, GUTTINGER J, MATHIS T, BATLOGG B, IHN T, ENSSLIN K

Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime

APPLIED PHYSICS LETTERS

MULLER T, GUTTINGER J, BISCHOFF D, HELLMULLER S, ENSSLIN K, IHN T

Quantum capacitance and density of states of graphene

APPLIED PHYSICS LETTERS

DROSCHER S, ROULLEAU P, MOLITOR F, STUDERUS P, STAMPFER C, ENSSLIN K, IHN T

Transport through graphene double dots

APPLIED PHYSICS LETTERS

MOLITOR F, DROSCHER S, GUTTINGER J, JACOBSEN A, STAMPFER C, IHN T, ENSSLIN K

Observation of excited states in a graphene quantum dot

APPLIED PHYSICS LETTERS

SCHNEZ S, MOLITOR F, STAMPFER C, GUTTINGER J, SHORUBALKO I, IHN T, ENSSLIN K

Charge detection in graphene quantum dots

APPLIED PHYSICS LETTERS

GUTTINGER J, STAMPFER C, HELLMULLER S, MOLITOR F, IHN T, ENSSLIN K

Tunable Coulomb blockade in nanostructured graphene

APPLIED PHYSICS LETTERS

STAMPFER C, GUTTINGER J, MOLITOR F, GRAF D, IHN T, ENSSLIN K