国家/地区 Usa（5）
关键词 CONTACT RESISTANCE（8）
出版物 APPLIED PHYSICS LETTERS（8）
出版时间 2009（3） 2010（2）
机构
作者

Metal contact to graphene nanoribbon

APPLIED PHYSICS LETTERS

SEOL G, GUO J

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Graphene field-effect transistors with self-aligned gates

APPLIED PHYSICS LETTERS

FARMER DB, LIN YM, AVOURIS P

Contact resistance in few and multilayer graphene devices

APPLIED PHYSICS LETTERS

VENUGOPAL A, COLOMBO L, VOGEL EM

Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors

APPLIED PHYSICS LETTERS

UNARUNOTAI S, MURATA Y, CHIALVO CE, KIM HS, MACLAREN S, MASON N, PETROV I, ROGERS JA

Observation of chiral quantum-Hall edge states in graphene

APPLIED PHYSICS LETTERS

KI DK, JO S, LEE HJ

First-principles investigation on bonding formation and electronic structure of metal-graphene contacts

APPLIED PHYSICS LETTERS

RAN QS, GAO MZ, GUAN XM, WANG Y, YU ZP

Quantum resistance metrology in graphene

APPLIED PHYSICS LETTERS

GIESBERS AJM, RIETVELD G, HOUTZAGER E, ZEITLER U, YANG R, NOVOSELOV KS, GEIM AK, MAAN JC