国家/地区 Japan（4）
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2013（2）
机构 UNIV TOKYO（4）
作者 NISHIMURA T（4）

Large Fermi energy modulation in graphene transistors with high-pressure O-2-annealed Y2O3 topgate insulators

APPLIED PHYSICS LETTERS

KANAYAMA K, NAGASHIO K, NISHIMURA T, TORIUMI A

The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity

APPLIED PHYSICS LETTERS

IFUKU R, NAGASHIO K, NISHIMURA T, TORIUMI A

Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement

APPLIED PHYSICS LETTERS

NAGASHIO K, NISHIMURA T, TORIUMI A

Contact resistivity and current flow path at metal/graphene contact

APPLIED PHYSICS LETTERS

NAGASHIO K, NISHIMURA T, KITA K, TORIUMI A