国家/地区 France（2）
关键词 GRAPHENE FET GFET（7）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（7）
出版时间 2015（3） 2016（2）
机构 UNIV BORDEAU.（2）
作者 FREGONESE S（2） ZIMMER T（2）

Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling

IEEE TRANSACTIONS ON ELECTRON DEVICES

PAUSSA A, FIORI G, PALESTRI P, GEROMEL M, ESSENI D, IANNACCONE G, SELMI L

Wafer-Scale Statistical Analysis of Graphene Field-Effect Transistors-Part II: Analysis of Device Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES

SMITH AD, WAGNER S, KATARIA S, MALM BG, LEMME MC, OSTLING M

A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

IEEE TRANSACTIONS ON ELECTRON DEVICES

SATOU A, TAMAMUSHI G, SUGAWARA K, MITSUSHIO J, RYZHII V, OTSUJI T

Comments on "Optimization of a Compact I-V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration"

IEEE TRANSACTIONS ON ELECTRON DEVICES

FREGONESE S, ZIMMER T

Resistance-Based Approach for Drain Current Modeling in Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

JAIN S, DUTTA AK

Optimization of a Compact I-V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration

IEEE TRANSACTIONS ON ELECTRON DEVICES

IANNAZZO M, LO MUZZO V, RODRIGUEZ S, PANDEY H, RUSU A, LEMME M, ALARCON E

Graphene Transistor-Based Active Balun Architectures

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZIMMER T, FREGONESE S