国家/地区 Sweden（2）
关键词 SEMICONDUCTOR DEVICE MODELING（4）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（4）
出版时间
机构
作者

A Large-Signal Graphene FET Model

IEEE TRANSACTIONS ON ELECTRON DEVICES

HABIBPOUR O, VUKUSIC J, STAKE J

The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHAVES FA, JIMENEZ D

Device Model for Graphene Spin Valves

IEEE TRANSACTIONS ON ELECTRON DEVICES

LIU FL, LIU Y, SMITH DL, RUDEN PP

A Parameter Extraction Methodology for Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JEPPSON K