国家/地区 Japan（7）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（7）
出版时间 2011（4） 2009（3）
机构 HOKKAIDO UNI.（6）
作者 SANO E（7）

Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Impact of Site-Potential Asymmetry on Electron Transport in Graphene

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

JAPANESE JOURNAL OF APPLIED PHYSICS

EL MOUTAOUAKIL A, KANG HC, HANDA H, FUKIDOME H, SUEMITSU T, SANO E, SUEMITSU M, OTSUJI T

Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect

JAPANESE JOURNAL OF APPLIED PHYSICS

TAKATSUKA Y, SANO E, RYZHII V, OTSUJI T

Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Performance Prediction of Graphene-Channel Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T