国家/地区 Korea（3）
关键词 DOPING（5）
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（5）
出版时间 2015（2）
机构
作者

Atmospheric adsorption on pristine and nitrogen-doped graphene: doping-dependent, spatially selective

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KOLESOV EA, TIVANOV MS, KOROLIK OV, KATAEV EY, XIAO F, KAPITANOVA OO, CHO HD, KANG TW, PANIN GN

Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WEHRFRITZ P, FROMM F, MALZER S, SEYLLER T

Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KIM H, DUGERJAV O, LKHAGVASUREN A, SEO JM

Controlled n-doping in chemical vapour deposition grown graphene by antimony

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KHALIL HMW, NAM JT, KIM KS, NOH H

Clear manifestation of phonon anomaly in single-layer graphene by chemical p-type doping

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SHIN DH, KIM S, KIM JM, JANG CW, KIM JH, CHOI SH