国家/地区 Korea（3）
关键词 FIELDEFFECT TRANSISTOR（4）
出版物 JOURNAL OF THE KOREAN PHYSICAL SOCIETY（4）
出版时间 2020（2）
机构
作者

Understanding the Charge Transport Mechanism in MoS2 Transistors with Graphene Electrodes

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

JANG J, HWANG DK

Feasibility of a Dual-Gate Graphene Transistor to Test Various Gate Dielectrics for Two-Dimensional Device Application

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

PARK N, SUH D, KANG H

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S

TCAD Simulations of graphene field-effect transistors based on the quantum capacitance effect

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

HAFSI B, BOUBAKER A, ISMAIL N, KALBOUSSI A, LMIMOUNI K