国家/地区 China（3） Usa（2）
关键词
出版物 JOURNAL OF VACUUM SCIENCE TECHNOLOGY B（13）
出版时间 2019（13）
机构
作者

Structural, morphologic and optical properties of graphene doped binary TiO2-P2O5 nanocomposite

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

BASCHIR L, IORDACHE AM, SAVASTRU D, POPESCU AA, VASILIU IC, ELISA M, OBREJA C, FILIPESCU M, TRUSCA R, STCHAKOVSKY M, IORDACHE S

Diagnostic of graphene on Ge(100)/Si(100) in a 200mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

FURSENKO O, LUKOSIUS M, BAUER J, VILLRINGER C, LUX H, BARWOLF F, LISKER M, MAI A

Detection of DNA homopolymer with graphene nanopore

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

ZHOU L, LI K, LI ZW, HE PY, LIN KB, MO JW, MA J

Enhanced performance of graphene/GaAs nanowire photoelectric conversion devices by improving the Schottky barrier height

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LUO YB, YAN X, ZHANG X, ZHANG MQ, LI B, ZHENG JH, LU QC, LIN QM, ZENG QS, REN XM

Atomic H diffusion and C etching in multilayer graphene monitored using a Y based optical sensor

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

MUND BK, SOROKA O, STURM JM, VAN DEN BELD WTE, LEE CJ, BIJKERK F

Oxygen reduction reaction mechanism of N-doped graphene nanoribbons

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

MATSUYAMA H, GOMI S, NAKAMURA J

Atomic deuteration of epitaxial many-layer graphene on 4H-SiC(0001)

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

MAZZA AR, MIETTINEN A, CONRAD M, CHARLTON TR, HE XQ, GUHA S, BIAN G, LIN J, CONRAD EH, MICELI PF

Remote plasma-assisted low-temperature large-area graphene synthesis

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

PAE JY, MEDWAL R, VAS JV, MATHAM MV, RAWAT RS

Selective growth of uniform single-layer graphene on Cu foil and fabrication of damage-free field effect transistor combining with direct transfer

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

PARK S, PARK H, CHOI Y, KIM O

High-yield fabrication method for high-frequency graphene devices using titanium sacrificial layers

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

THEOFANOPOULOS PC, AGENO S, GUO YQ, KALE S, WANG QH, TRICHOPOULOS GC